參數(shù)資料
型號: PIC16C715
廠商: Microchip Technology Inc.
英文描述: 8-Bit CMOS Microcontroller with A/D Converter(每個I/O口有25mA驅(qū)動/吸收電流,微控制器)
中文描述: 8位CMOS微控制器與A / D轉(zhuǎn)換器(每個的I / O口有25毫安驅(qū)動/吸收電流,微控制器)
文件頁數(shù): 82/120頁
文件大小: 764K
代理商: PIC16C715
PIC16C715
DS30560A-page 82
Advance Information
1996 Microchip Technology Inc.
11.2
DC Characteristics:
PIC16LC715-04 (Commercial, Industrial)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature
-40C
0C
Min
Typ Max Units
T
A
+85C for industrial and
T
A
+70C for commercial
Conditions
Param
No.
Characteristic
Sym
D001
D002*
Supply Voltage
RAM Data Retention
Voltage (Note 1)
V
DD
start voltage to
ensure internal
Power-on Reset
signal
V
DD
rise rate to
ensure internal
Power-on Reset
signal
Brown-out Reset
Voltage
Supply Current
(Note 2)
V
DD
V
DR
3.0
-
-
5.5
-
V
V
LP, XT, RC osc configuration (DC - 4 MHz)
Device in SLEEP mode
1.5
D003
V
POR
-
V
SS
-
V
See section on Power-on Reset for details
D004*
S
VDD
0.05
-
-
V/ms See section on Power-on Reset for details
D005
B
VDD
3.7
4.0
4.3
V
BODEN configuration bit is enabled
D010
D010A
I
DD
-
-
2.0
22.5
3.8
48
mA
μ
A
XT, RC osc configuration
F
OSC
= 4 MHz, V
DD
= 3.0V (Note 4)
LP osc configuration
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT disabled
BOR enabled V
DD
= 3.0V
D015
Brown-out Reset
Current (Note 5)
Power-down Current
(Note 3)
I
BOR
-
300*
500
μ
A
D020
D021
D021A
D023
I
PD
-
-
-
-
7.5
0.9
0.9
300*
30
5
5
500
μ
A
μ
A
μ
A
μ
A
V
DD
= 3.0V, WDT enabled, -40
°
C to +85
°
C
V
DD
= 3.0V, WDT disabled, 0
°
C to +70
°
C
V
DD
= 3.0V, WDT disabled, -40
°
C to +85
°
C
BOR enabled V
DD
= 3.0V
Brown-out Reset Cur-
rent (Note 5)
These parameters are characterized but not tested.
Data in "Typ" column is at 5V, 25C unless otherwise stated. These parameters are for design guidance only
and are not tested.
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern, and temperature also have an
impact on the current consumption.
The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail to rail; all I/O pins tristated, pulled to V
DD
MCLR = V
DD
; WDT enabled/disabled as specified.
3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
4: For RC osc configuration, current through Rext is not included. The current through the resistor can be esti-
mated by the formula Ir = V
DD
/2Rext (mA) with Rext in kOhm.
5: The
current is the additional current consumed when this peripheral is enabled. This current should be
added to the base I
DD
or I
PD
measurement.
I
BOR
*
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