
1996 Microchip Technology Inc.
Advance Information
DS30560A-page 79
PIC16C715
11.0
ELECTRICAL CHARACTERISTICS FOR PIC16C715
Absolute Maximum Ratings
Ambient temperature under bias.................................................................................................................-55 to +125C
Storage temperature.............................................................................................................................. -65C to +150C
Voltage on any pin with respect to V
SS
(except V
DD
and MCLR) ...................................................-0.3V to (V
Voltage on V
DD
with respect to V
SS
................................................................................................................ 0 to +7.5V
Voltage on MCLR with respect to V
SS
(Note 2) .................................................................................................0 to +14V
Total power dissipation (Note 1)................................................................................................................................1.0W
Maximum current out of V
SS
pin ...........................................................................................................................300 mA
Maximum current into V
DD
pin..............................................................................................................................250 mA
Input clamp current, I
IK
(V
I
< 0 or V
I
> V
DD
)
.....................................................................................................................±
Output clamp current, I
OK
(V
O
< 0 or V
O
> V
DD
)
.............................................................................................................±
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by
PORTA........................................................................................................................200 mA
Maximum current sourced by PORTA...................................................................................................................200 mA
Maximum current sunk by
PORTB........................................................................................................................200 mA
Maximum current sourced by PORTB ..................................................................................................................200 mA
Note 1:
Power dissipation is calculated as follows: Pdis = V
DD
+ 0.3V)
20 mA
20 mA
DD
x {I
DD
-
∑
I
OH
} +
∑
{(V
DD
- V
OH
) x I
OH
} +
∑
(V
O
l x I
OL
).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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