參數(shù)資料
型號： PF48F2P0ZBQ0
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁數(shù)： 78/102頁
文件大?。?/td> 1609K
代理商： PF48F2P0ZBQ0
1-Gbit P30 Family
April 2005
78
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
Appendix A Write State Machine
Figure 34
through
Figure 39
show the command state transitions (Next State Table) based on
incoming commands. Only one partition can be actively programming or erasing at a time. Each
partition stays in its last read state (Read Array, Read Device ID, CFI Query or Read Status Register)
until a new command changes it. The next WSM state does not depend on the partition’s output state.
Figure 34.
Write State Machine—Next State Table (Sheet 1 of 6)
Read
Array
(2)
Word
Program
(3,4)
Buffered
Program
(BP)
Erase
Setup
(3,4)
Buffered
Enhanced
Factory Pgm
Setup
(3, 4)
BE Confirm,
P/E
Resume,
ULB,
Confirm
(8)
BP / Prg /
Erase
Suspend
Read
Status
Clear
Status
Register
(5)
Read
ID/Query
Lock, Unlock,
Lock-down,
CR setup
(4)
(FFH)
(10H/40H)
(E8H)
(20H)
(80H)
(D0H)
(B0H)
(70H)
(50H)
(90H, 98H)
(60H)
Ready
Program
Setup
BP Setup
Erase
Setup
BEFP Setup
Lock/CR
Setup
Ready
(Unlock
Block)
Setup
Busy
Setup
Busy
Word
Program
Suspend
Suspend
Word
Program
Busy
Setup
BP Load 1
BP Load 2
BP
Confirm
BP Busy
BP Busy
BP Suspend
BP
Suspend
BP Busy
Setup
Erase Busy
Busy
Erase
Suspend
Suspend
Erase
Suspend
Word
Program
Setup in
Erase
Suspend
BP Setup in
Erase
Suspend
Erase Busy
Lock/CR
Setup in
Erase
Suspend
BP Suspend
Erase
BP Busy
Erase Busy
Erase Suspend
Erase Suspend
Ready (Error)
Erase Busy
BP Suspend
Ready (Error)
Word
Program
Program Busy
Word Program Suspend
Word Program Busy
OTP
Ready (Lock Error)
Ready
Ready
Ready (Lock Error)
OTP Busy
Current Chip
State
(7)
Command Input to Chip and resulting
Chip
Next State
BP
BP Busy
Lock/CR Setup
BP Load 2
Ready (Error)
Ready (Error)
Word Program Busy
BP Confirm if Data load into Program Buffer is complete; Else BP Load 2
Word Program Suspend
BP Load 1
相關(guān)PDF資料
PDF描述
PF48F3P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F4P0ZBQ0 Intel StrataFlash Embedded Memory
PF48F4P0VB00 Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A
PF48F0P0VT00 Intel StrataFlash Embedded Memory
PF48F2P0VT00 Intel StrataFlash Embedded Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F2P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F2P0ZTQ0 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
PF48F3000P0ZBQ0 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:Numonyx StrataFlash Embedded Memory
PF48F3000P0ZBQ0A 功能描述:IC FLASH 128MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PF48F3000P0ZBQEA 功能描述:IC FLASH 128MBIT 65NM SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*