參數(shù)資料
型號(hào)： PF48F2P0ZBQ0
廠商： Intel Corp.
英文描述： Intel StrataFlash Embedded Memory
中文描述： 英特爾StrataFlash嵌入式存儲(chǔ)器
文件頁(yè)數(shù)： 32/102頁(yè)
文件大?。?/td> 1609K
代理商： PF48F2P0ZBQ0
1-Gbit P30 Family
April 2005
32
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
6.2
DC Voltage Characteristics
I
PPW
V
PP
Program Current
0.05
0.10
0.05
0.10
mA
V
PP
= V
PPL,
program in progress
V
PP
= V
PPH,
program in progress
8
22
8
22
I
PPE
V
PP
Erase Current
0.05
0.10
0.05
0.10
mA
V
PP
= V
PPL,
erase in progress
8
22
8
22
V
PP
= V
PPH,
erase in progress
Notes:
1.
2.
3.
4.
5.
6.
7.
All currents are RMS unless noted. Typical values at typical V
, T
= +25 °C.
I
is the average current measured over any 5 ms time interval 5 μs after CE# is deasserted.
Sampled, not 100% tested.
V
CC
read + program current is the sum of V
read and V
program currents.
V
CC
read + erase current is the sum of V
read and V
erase currents.
I
CCES
is specified with the device deselected. If device is read while in erase suspend, current is I
plus I
.
I
, I
CCE
measured over typical or max times specified in
Section 7.5, “Program and Erase Characteristics” on
page 45
Table 13. DC Voltage Characteristics
Sym
Parameter
CMOS Inputs
(V
CCQ
= 1.7 V - 3.6 V)
TTL Inputs
(1)
(V
CCQ
= 2.4 V - 3.6 V)
Unit
Test Condition
Notes
Min
Max
Min
Max
V
IL
Input Low Voltage
0
0.4
0
0.6
V
2
V
IH
Input High Voltage
V
CCQ
– 0.4
V
CCQ
2.0
V
CCQ
V
V
OL
Output Low Voltage
-
0.1
-
0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
V
OH
Output High Voltage
V
CCQ
– 0.1
-
V
CCQ
– 0.1
-
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
V
PPLK
V
PP
Lock-Out Voltage
-
0.4
-
0.4
V
3
V
LKO
V
CC
Lock Voltage
1.0
-
1.0
-
V
V
LKOQ
V
CCQ
Lock Voltage
0.9
-
0.9
-
V
NOTES:
1.
2.
3.
Synchronous read mode is not supported with TTL inputs.
V
IL
can undershoot to –0.4 V and V
can overshoot to V
+ 0.4 V for durations of 20 ns or less.
V
PP
≤
V
PPLK
inhibits erase and program operations. Do not use V
PPL
and V
PPH
outside their valid ranges.
Table 12. DC Current Characteristics (Sheet 2 of 2)
Sym
Parameter
CMOS
Inputs
(V
=
1.7 V - 3.6 V)
TTL Inputs
(V
CCQ
=
2.4 V - 3.6 V)
Unit
Test Conditions
Notes
Typ
Max
Typ
Max
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PF48F2P0ZT00 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Intel StrataFlash Embedded Memory
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PF48F3000P0ZBQ0A 功能描述:IC FLASH 128MBIT 85NS 88TPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PF48F3000P0ZBQEA 功能描述:IC FLASH 128MBIT 65NM SCSP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Axcell™ 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6
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