參數(shù)資料
型號： NTB30N06
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 30Amps, 60 Volts, N-Channel TO-220(30A, 60 V，N通道TO-220封裝的功率MOSFET)
中文描述： 27 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 78K
代理商： NTB30N06
NTP30N06, NTB30N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
71.1
70
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
°
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
3.05
7.3
4.0
Vdc
mV/
°
C
Static DraintoSource OnResistance (Note 1)
(V
GS
= 10 Vdc, I
D
= 15 Adc)
R
DS(on)
35
42
m
Static DraintoSource OnVoltage (Note 1)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
(V
GS
= 10 Vdc, I
D
= 15 Adc, T
J
= 150
°
C)
V
DS(on)
1.1
0.98
1.5
Vdc
Forward Transconductance (Note 1) (V
DS
= 7.0 Vdc, I
D
= 15 Adc)
g
FS
16
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
850
1200
pF
Output Capacitance
C
oss
250
350
Transfer Capacitance
C
rss
68
100
SWITCHING CHARACTERISTICS
(Note 2)
TurnOn Delay Time
(V
DD
= 30 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 ) (Note 1)
t
d(on)
11
25
ns
Rise Time
t
r
36
80
TurnOff Delay Time
t
d(off)
24
50
Fall Time
t
f
31
60
Gate Charge
(V
DS
= 48 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc) (Note 1)
Q
T
23.4
46
nC
Q
1
5.1
Q
2
11
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 30 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
1.03
1.05
1.15
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s) (Note 1)
t
rr
52
ns
t
a
38
t
b
15
Reverse Recovery Stored Charge
Q
RR
0.094
C
1. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperatures.
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