參數(shù)資料
型號: NTB35N15
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 37 Amps, 150 Volts N-Channel Enhancement-Mode(37A,150V,N通道,增強模式功率MOSFET)
中文描述: 37 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 418B-04, D2PAK-3
文件頁數(shù): 1/8頁
文件大?。?/td> 80K
代理商: NTB35N15
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 5
1
Publication Order Number:
NTB35N15/D
NTB35N15
Power MOSFET
37 Amps, 150 Volts
NChannel EnhancementMode D
2
PAK
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Mounting Information Provided for the D
2
PAK Package
PbFree Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
150
Vdc
DraintoSource Voltage (R
GS
= 1.0 M )
V
DGR
150
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GSM
20
40
Vdc
Drain Current Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Pulsed (Note 2)
I
D
I
D
I
DM
37
23
111
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
178
1.43
2.0
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 100 Vdc, V
= 10 Vdc,
I
L(pk)
= 21.6 A, L = 3.0 mH, R
G
= 25 )
E
AS
700
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
R
JC
R
JA
R
JA
0.7
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in
2
).
2. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
37 AMPERES, 150 VOLTS
50 m
@ V
GS
= 10 V
NChannel
D
S
G
http://onsemi.com
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
35N15
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
Device
Package
Shipping
ORDERING INFORMATION
NTB35N15
D
2
PAK
50 Units/Rail
NTB35N15T4
D
2
PAK
D
2
PAK
(PbFree)
800 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTB35N15G
D
2
PAK
(PbFree)
50 Units/Rail
NTB35N15T4G
800 Tape & Reel
35N15G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
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