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參數(shù)資料
| 型號： | NTB52N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode(52A，100V，N通道，增強模式功率MOSFET) |
| 中文描述： | 52 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 79K |
| 代理商： | NTB52N10 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
NTB52N10/D
NTB52N10
Power MOSFET
52 Amps, 100 Volts
NChannel EnhancementMode D
2
PAK
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Mounting Information Provided for the D
2
PAK Package
PbFree Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
DGR
100
Vdc
DraintoSource Voltage (R
GS
= 1.0 M )
GatetoSource Voltage
Continuous
NonRepetitive (t
p
100
Vdc
10 ms)
V
GS
V
GSM
20
40
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Pulsed (Note 1)
I
D
I
D
I
DM
P
D
52
40
156
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
178
1.43
2.0
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
= 10 Vdc,
I
L(pk)
= 40 A, L = 1.0 mH, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 2)
E
AS
800
mJ
R
JC
R
JA
R
JA
T
L
0.7
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in
2
).
260
°
C
Device
Package
Shipping
ORDERING INFORMATION
NChannel
D
S
G
NTB52N10
D
2
PAK
50 Units / Rail
NTB52N10T4
D
2
PAK
800 / Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
DSS
R
DS(ON)
TYP
I
D
MAX
100 V
30 m @ 10 V
52 A
NTB52N10G
D
2
PAK
(PbFree)
50 Units / Rail
NTB52N10T4G
D
2
PAK
(PbFree)
800 / Tape & Reel
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
NTB52N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
NTB
52N10G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
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| NTB52N10G | 功能描述:MOSFET 100V 52A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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