參數(shù)資料
型號(hào)： NTB5605P
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET
中文描述： 18.5 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 62K
代理商： NTB5605P
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 1
1
Publication Order Number:
NTB5605P/D
NTB5605P
Power MOSFET
60 V, 18.5 A, PChannel, D
2
PAK
Features
Designed for Low R
DS(on)
Withstands High Energy in Avalanche and Commutation Modes
Applications
Power Supplies
PWM Motor Control
Converters
Power Management
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
V
GatetoSource Voltage
V
GS
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
°
C
I
D
18.5
A
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
88
W
Pulsed Drain Current
t
p
= 10 s
I
DM
55
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 25 V, V
GS
= 5.0 V, I
PK
= 15 A,
L = 3.0 mH, R
G
= 25 )
E
AS
338
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoCase (Drain) – Steady State
R
JC
1.7
°
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size (Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size (Cu Area 0.41 in
2
).
60 V
120 m @ 5.0 V
I
D
MAX
V
(BR)DSS
R
DS(on)
TYP
18.5 A
Device
Package
Shipping
ORDERING INFORMATION
NTB5605P
D
2
PAK
50 Units/Rail
D
2
PAK
CASE 418B
STYLE 2
1
2
3
4
PChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
Gate
Drain
Drain
Source
NTB5605P
YWW
NTB5605P = Device Code
Y
= Year
WW
= Work Week
NTB5605PT4
D
2
PAK
800/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTB5605P_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp
NTB5605PG 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605PT4 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605PT4G 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605T4G 功能描述:MOSFET PFET 60V 18.5A TR D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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