參數(shù)資料
型號： NTB5605P
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET
中文描述： 18.5 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 62K
代理商： NTB5605P
NTB5605P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
V
(Br)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V
(Br)DSS
/T
J
64
mV/
°
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V
T
J
= 25
°
C
1.0
A
V
DS
= 60 V
T
J
= 125
°
C
10
GatetoSource Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
V
GS(th)
V
GS
= V
DS
, I
D
= 250 A
1.0
1.5
2.0
V
DraintoSource On Resistance
R
DS(on)
V
GS
= 5.0 V, I
D
= 8.5 A
V
GS
= 5.0 V, I
D
= 17 A
120
140
140
m
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 8.5 A
12
S
DraintoSource On Voltage
V
DS(on)
V
GS
= 5.0 V, I
D
= 8.5 A
1.3
V
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
iss
730
1190
Output Capacitance
C
oss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
211
300
pF
Reverse Transfer Capacitance
C
rss
67
120
Total Gate Charge
Q
G(TOT)
13
22
GatetoSource Charge
Q
GS
V
GS
= 5.0 V, V
= 48 V,
I
D
= 17 A
4.0
nC
GatetoDrain Charge
Q
GD
7.0
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
t
d(on)
12.5
25
Rise Time
t
r
V
GS
= 5.0 V, V
DD
= 30 V,
I
D
= 17 A, R
G
= 9.1
122
183
ns
TurnOff Delay Time
t
d(off)
29
58
Fall Time
t
f
75
150
DRAINSOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
= 0 V
V
GS
0 V
I
S
= 17 A
T
J
= 25
°
C
1.55
2.5
V
T
J
= 125
°
C
1.4
Reverse Recovery Time
t
rr
60
Charge Time
t
a
V
GS
= 0 V, dI
S
/dt = 100 A/ s,
I
S
= 17 A
39
ns
Discharge Time
t
b
21
Reverse Recovery Charge
Q
RR
2%.
0.14
nC
3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
300 s, Duty Cycle
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相關代理商/技術參數(shù)
參數(shù)描述
NTB5605P_05 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET -60 Volt, -18.5 Amp
NTB5605PG 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605PT4 功能描述:MOSFET -60V -18.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605PT4G 功能描述:MOSFET -60V -18.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB5605T4G 功能描述:MOSFET PFET 60V 18.5A TR D2PAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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