參數(shù)資料
型號： NTB52N10
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode(52A，100V，N通道，增強模式功率MOSFET)
中文描述： 52 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 2/8頁
文件大小： 79K
代理商： NTB52N10
NTB52N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
100
160
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 125
°
C)
I
DSS
5.0
50
Adc
GateBody Leakage Current (V
GS
=
±
20
Vdc, V
DS
= 0 Vdc)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
2.92
8.75
4.0
Vdc
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 26 Adc)
(V
GS
= 10 Vdc, I
D
= 26 Adc, T
J
= 125
°
C)
R
DS(on)
0.023
0.050
0.030
0.060
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 52 Adc)
V
DS(on)
1.25
1.45
Vdc
Forward Transconductance (V
DS
= 26 Vdc, I
D
= 10 Adc)
g
FS
31
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
2250
3150
pF
Output Capacitance
C
oss
620
860
Reverse Transfer Capacitance
C
rss
135
265
SWITCHING CHARACTERISTICS
(Notes 3 & 4)
TurnOn Delay Time
(V
DD
= 80 Vdc, I
D
= 52 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 )
t
d(on)
15
25
ns
Rise Time
t
r
95
180
TurnOff Delay Time
t
d(off)
74
150
Fall Time
t
f
100
190
Total Gate Charge
(V
DS
= 80 Vdc, I
D
= 52 Adc,
V
GS
= 10 Vdc)
Q
tot
72
135
nC
GatetoSource Charge
Q
gs
13
GatetoDrain Charge
Q
gd
37
BODYDRAIN DIODE RATINGS
(Note 3)
Diode Forward OnVoltage
(I
S
= 52 Adc, V
GS
= 0 Vdc)
(I
S
= 37 Adc, V
GS
= 0 Vdc, T
J
= 125
°
C)
V
SD
1.06
0.95
1.5
Vdc
Reverse Recovery Time
(I
S
= 52 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
148
ns
t
a
106
t
b
42
Reverse Recovery Stored Charge
Q
RR
0.66
C
3. Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
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