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參數(shù)資料
| 型號(hào)： | NTB52N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 52 Amps, 100 Volts N-Channel Enhancement-Mode(52A，100V，N通道，增強(qiáng)模式功率MOSFET) |
| 中文描述： | 52 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | NTB52N10 |
NTB52N10
http://onsemi.com
3
Figure 1. OnRegion Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
100
60
50
40
30
20
10
10
7
6
5
4
3
2
1
0
Figure 2. Transfer Characteristics
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
8
6
5
4
3
2
100
60
50
40
30
20
10
0
0
Figure 3. OnResistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
0.05
0.04
0.03
0.01
50
40
30
20
10
Figure 4. OnResistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
40
30
20
10
0
0.04
0.03
0.02
0.01
0
0
0.05
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
2.5
2.25
2.0
1.75
1.5
1.25
1.0
0.75
0.5
150
120
90
60
30
0
30
60
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
50
40
30
1000
100
10
0.25
0
10,000
Figure 6. DraintoSource Leakage Current
versus Voltage
I
D
,
I
D
,
R
D
,
100
60
0.02
R
D
,
100
50
R
D
I
D
,
70
60
100
8
9
60
80
90
V
GS
= 10 V
9 V
T
J
= 25
°
C
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 100
°
C
V
GS
= 10 V
T
J
= 25
°
C
V
GS
= 10 V
V
GS
= 15 V
I
D
= 26 A
V
GS
= 10 V
T
J
= 150
°
C
V
GS
= 0 V
T
J
= 100
°
C
70
80
90
8 V
7 V
6 V
5 V
5.5 V
4 V
4.5 V
7
70
80
90
70
80
90
70
80
90
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