參數(shù)資料
型號(hào)： NTB45N06
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 45 Amps, 60 Volts
中文描述： 45 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 64K
代理商： NTB45N06
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 0
1
Publication Order Number:
NTP45N06/D
NTP45N06, NTB45N06
Power MOSFET
45 Amps, 60 Volts
N–Channel TO–220 and D2PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower VDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specification
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 10 M
)
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
Drain Current
– Continuous @ TA = 25
°
C
– Continuous @ TA = 100
°
C
– Single Pulse (tp
Total Power Dissipation @ TA = 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (Note 1.)
Total Power Dissipation @ TA = 25
°
C (Note 2.)
Operating and Storage Temperature Range
VDSS
VDGR
60
60
Vdc
Vdc
Vdc
10 ms)
VGS
VGS
20
30
10
μ
s)
ID
ID
IDM
PD
45
30
150
125
0.83
3.2
2.4
–55 to
+175
240
Adc
Apk
W
W/
°
C
W
W
°
C
TJ, Tstg
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25
,
IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
EAS
mJ
NTP45N06
LLYWW
NTB45N06
LLYWW
45 AMPERES
60 VOLTS
RDS(on) = 26 m
Device
Package
Shipping
ORDERING INFORMATION
NTP45N06
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx45N06
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
D2PAK
CASE 418B
STYLE 2
4
NTB45N06
D2PAK
50 Units/Rail
NTB45N06T4
D2PAK
800/Tape & Reel
相關(guān)PDF資料
PDF描述
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NTB45N06LT4G 功能描述:MOSFET 60V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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