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參數(shù)資料
| 型號： | NTB30N20 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode(30A，200V，N通道，增強(qiáng)模式功率MOSFET) |
| 中文描述： | 30 A, 200 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 78K |
| 代理商： | NTB30N20 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 4
1
Publication Order Number:
NTB30N20/D
NTB30N20
Power MOSFET
30 Amps, 200 Volts
NChannel EnhancementMode D
2
PAK
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Mounting Information Provided for the D
2
PAK Package
PbFree Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
200
Vdc
DraintoSource Voltage (R
GS
= 1.0 M )
V
DGR
200
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GSM
30
40
Vdc
Drain Current
Continuous @ T
A
25
°
C
Continuous @ T
A
100
°
C
Pulsed (Note 2)
I
D
I
D
I
DM
30
22
90
Adc
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
P
D
214
1.43
2.0
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single DraintoSource Avalanche Energy,
Starting T
= 25
°
C
(V
= 100 Vdc, V
= 10 Vdc,
I
L
(pk) = 20 A, L = 3.0 mH, R
G
= 25 )
E
AS
450
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
R
JC
R
JA
R
JA
0.7
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
2. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
30N20
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
Device
Package
Shipping
ORDERING INFORMATION
NTB30N20
D
2
PAK
50 Units/Rail
NChannel
D
S
G
NTB30N20T4
D
2
PAK
D
2
PAK
(PbFree)
800 Tape & Reel
V
DSS
R
DS(ON)
TYP
I
D
MAX
200 V
68 m @ V
GS
= 10 V
30 A
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTB30N20G
D
2
PAK
(PbFree)
50 Units/Rail
NTB30N20T4G
800 Tape & Reel
30N20G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
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| NTB30N20G | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N20T4 | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB30N20T4G | 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB-3402 | 制造商:Quest Technology International Inc 功能描述: |
| NTB35N15 | 功能描述:MOSFET 150V 37A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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