參數(shù)資料
型號(hào)： NTB30N20
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 30 Amps, 200 Volts N-Channel Enhancement-Mode(30A，200V，N通道，增強(qiáng)模式功率MOSFET)
中文描述： 30 A, 200 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 78K
代理商： NTB30N20
NTB30N20
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
200
307
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(V
GS
= 0 Vdc, V
DS
= 200 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 200 Vdc, T
J
= 175
°
C)
I
DSS
5.0
125
Adc
GateBody Leakage Current (V
GS
=
±
30
Vdc, V
DS
= 0)
I
GSS
±
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
V
DS
= V
GS,
I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
2.9
8.9
4.0
Vdc
mV/
°
C
Static DraintoSource OnState Resistance
(V
GS
= 10 Vdc, I
D
= 15 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 10 Vdc, I
D
= 15 Adc, T
J
= 175
°
C)
R
DS(on)
0.068
0.067
0.200
0.081
0.080
0.240
DraintoSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 30 Adc)
V
DS(on)
2.0
2.5
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 15 Adc)
g
FS
20
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
(V
DS
= 160 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
iss
C
oss
2335
pF
Output Capacitance
380
148
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1.0 MHz)
C
rss
75
SWITCHING CHARACTERISTICS
(Notes 3 & 4)
TurnOn Delay Time
(V
DD
= 100 Vdc, I
D
= 18 Adc,
V
GS
= 5.0 Vdc, R
G
= 2.5 )
(V
DD
= 160 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 )
t
d(on)
10
12
ns
Rise Time
t
r
20
70
TurnOff Delay Time
t
d(off)
40
82
Fall Time
t
f
24
88
Gate Charge
(V
DS
= 160 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc)
(V
DS
= 160 Vdc, I
D
= 18 Adc,
V
GS
= 5.0 Vdc)
Q
tot
75
48
100
nC
Q
gs
20
16
Q
gd
32
BODYDRAIN DIODE RATINGS
(Note 3)
Forward OnVoltage
(I
S
= 30 Adc, V
GS
= 0 Vdc)
(I
S
= 30 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
0.91
0.80
1.1
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
230
ns
t
a
140
t
b
85
Reverse Recovery Stored Charge
Q
RR
1.85
C
3. Indicates Pulse Test: P. W. = 300 s max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
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相關(guān)代理商/技術(shù)參數(shù)
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NTB30N20T4 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N20T4G 功能描述:MOSFET 200V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB-3402 制造商:Quest Technology International Inc 功能描述:
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