參數(shù)資料
型號： NTB30N06
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 30Amps, 60 Volts, N-Channel TO-220(30A, 60 V，N通道TO-220封裝的功率MOSFET)
中文描述： 27 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 418B-04, D2PAK-3
文件頁數(shù)： 1/7頁
文件大小： 78K
代理商： NTB30N06
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 1
1
Publication Order Number:
NTP30N06/D
NTP30N06, NTB30N06
Power MOSFET
30 Amps, 60 Volts
NChannel TO220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
10 s)
I
D
I
D
I
DM
27
15
80
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
P
D
88.2
0.59
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 26 A, V
DS
= 60 Vdc)
E
AS
101
mJ
Thermal Resistance, JunctiontoCase
R
JC
1.7
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
30 AMPERES, 60 VOLTS
R
DS(on)
= 42 m
TO220AB
CASE 221A
STYLE 5
12
3
4
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
NTx30N06
x
A
Y
WW
G
= Device Code
= B or P
= Assembly Location
= Year
= Work Week
= PbFree Package
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NTx30N06G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx
30N06G
AYWW
1
Gate
3
Source
4
Drain
2
Drain
http://onsemi.com
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相關代理商/技術參數(shù)
參數(shù)描述
NTB30N06G 功能描述:MOSFET NFET 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N06L 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N06LG 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N06LT4 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTB30N06LT4G 功能描述:MOSFET 60V 30A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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