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參數(shù)資料
| 型號： | NSAM265SRA |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | CompactSPEECH Digital Speech Processors |
| 中文描述： | CompactSPEECH數(shù)字語音處理器 |
| 文件頁數(shù)： | 31/58頁 |
| 文件大小： | 712K |
| 代理商： | NSAM265SRA |
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3.0 Command Set
(Continued)
TABLE 3-1. Tunable Parameters
(Continued)
Index
Parameter Name
Description
Default
24
ECHODDELAY
The near echo delay in samples. For example, the default value is computed as
follows: The near echo delay is assumed 500
m
s. Since the sampling rate is 8000 Hz
(i.e., 125
m
s per sample), the value of ECHODDELAY is 4.
Legal values: 0 to 255.
4
25
Reserved
D
26
DTMFDREVDTWIST
Controls the reverse twist level at which CompactSPEECH detects DTMF tones. While
the normal twist is set at 8 dB, the reverse twist can be either 8 dB (default) or 4 dB (If
this parameter is set to 1).
0
27
DTMFDTWISTDLEVEL
A one byte value that controls the twist level of a DTMF tone generated by the GT
command by controlling the energy level of each of the two tones (low frequency and
high frequency) composing the DTMF tone. The Least Significant Nibble (LSN)
controls the low tone and the Most Significant Nibble (MSN) controls the high tone.
The energy level of each tone as measured on the output of a TP3054 codec (before
the DAA) connected to the CompactSPEECH is summarized in the following table:
66
Nibble Value
0
1
2
3
4
5
6
7
8–15
The volume of the generated tone during meaurements was 6
(TONEDGENERATIONDLEVEL
a
VOLDLEVEL
e
6).
The default level means that the high tone is at
b
14.3 dBv and the low tone at
b
12.4 dBv which gives DTMF twist level of 1.9 dB.
Tone energy (dB-Volts)
0
b
17.8
b
14.3
b
12.9
b
12.4
b
12.0
b
11.9
b
11.85
b
11.85
VC
NSAM265SR
&
Volume ControlvolDlevel
NSAM265SF
&
Controls the energy level of all the output generators (play-
back, tone generation, and voice synthesis), with one com-
mand. The resolution is 3 dB.
The actual output level is composed of the tunable level
variable, plus the volDlevel. The valid range for the actual
output level of each output generator is defined in Table 3-1.
For example, if the tunable variable VCDDLEVEL is 6, and
volDlevel is
b
2, then the output level equals VCDDLEVEL
a
volDlevel
e
4.
WRAM
NSAM265SR
&
Write RAM tag,data
NSAM265SF
&
This command creates a new message with a message tag
tag. The following 32 bytes of data are stored as the new
message data in the message memory.
The WRAM command switches the CompactSPEECH to
the MEMORYDWRITE state. As long as it remains in this
state, each subsequent WRAM command appends new
message data to the end of the previous data. The Com-
pactSPEECH remains in the MEMORYDWRITE state until
an S command is issued. Note that while the Compact-
SPEECH is in MEMORYDWRITE state thetag parameter is
ignored.
If the memory becomes full, recording stops and EVDMEM-
FULL is set in the status word.
EVDMEMFULL will be also set in the NSAM265SF if there
is only one AFLASH block available for recording and the
MESSAGEDSAFE bit in the tag parameter is set.
NSAM265SR
If an attempt to record more than the maximum number of
messages is made, an ERRDINVALID error is reported.
31
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