- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363665 > NSB9435T1 (ON SEMICONDUCTOR) High Current Bias Resistor Transistors(高強度電流偏置電阻晶體管) PDF資料下載
參數(shù)資料
| 型號： | NSB9435T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Current Bias Resistor Transistors(高強度電流偏置電阻晶體管) |
| 中文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NSB9435T1 |
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 2
1
Publication Order Number:
NSB9435T1/D
NSB9435T1
Preferred Device
High Current Bias
Resistor Transistor
PNP Silicon
Collector –Emitter Sustaining Voltage –
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain –
h
FE
= 125 (Min) @ I
C
= 0.8 Adc
= 90 (Min) @ I
C
= 3.0 Adc
Low Collector –Emitter Saturation Voltage –
V
CE(sat)
= 0.275 Vdc (Max) @ I
C
= 1.2 Adc
= 0.55 Vdc (Max) @ I
C
= 3.0 Adc
SOT–223 Surface Mount Packaging
ESD Rating – Human Body Model: Class 1B
ESD Rating
– Machine Model: Class B
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
THERMAL CHARACTERISTICS
CB
EB
Base Current – Continuous
I
B
1.0
Adc
Collector Current – Continuous
+150
I
C
3.0
Adc
pad on FR–4 bd material
Total Power Dissipation @ T
C
= 25 C
Total P
D
@ T
A
= 25 C mounted on 1
″
Total P
D
@ T
A
= 25 C mounted on
P
D
3.0
1.56
0.72
Watts
mW/ C
Watts
Watts
Temperature Range
T
, T
–55 to
C
Characteristic
Symbol
Max
Unit
board material
– Junction to Ambient on 1
″
sq.
FR–4 board material
R
θ
JA
θ
JA
80
Soldering Purposes, 1/8
″
from
Device
Package
Shipping
ORDERING INFORMATION
SOT–223
CASE 318E
STYLE 1
NSB9435T1
SOT–223
1000/Tape & Reel
MARKING DIAGRAM
9435R
9435R = Device Code
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR 2,4
BASE
1
EMITTER 3
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.275 VOLTS
1
2
3
4
http://onsemi.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSBA114EDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBA114YDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC143TPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC144EPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC114EPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSB9435T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSB9435T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSB9435T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS SOT233 BR XSTR PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSB9435T1G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSBA113EDXV6T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT563 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標準包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。