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參數(shù)資料
| 型號： | NSBA114YDXV6T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, CASE 463A-01, 6 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | NSBA114YDXV6T1 |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 6
1
Publication Order Number:
NSBA114EDXV6/D
NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT563 package which is
ideal for lowpower surface mount applications where board space is
at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are PbFree Devices
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C (Note 1)
P
D
357
2.9
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
JA
350
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation @ T
A
= 25
°
C
Derate above 25
°
C (Note 1)
P
D
500
4.0
mW
mW/
°
C
Thermal Resistance, Junction-to-Ambient
(Note 1)
R
JA
250
°
C/W
Junction and Storage Temperature
Range
T
J
, T
stg
55 to
+150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ Minimum Pad
Preferred
devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
SOT563
CASE 463A
PLASTIC
STYLE 1
1
MARKING DIAGRAM
xx M
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NSBA1xxxDXV6T1
SOT563* 4000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*
*This package is inherently PbFree.
xx
= Device Code
(Refer to page 2)
= Date Code
= PbFree Package
M
(Note: Microdot may be in either location)
NSBA1xxxDXV6T1G SOT563* 4000/Tape & Reel
NSBA1xxxDXV6T5
SOT563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT563* 8000/Tape & Reel
相關(guān)PDF資料 |
PDF描述 |
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| NSBC143TPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
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| NSBC114EPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC114EPDXV6T5 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
| NSBC114YPDXV6T1 | Dual Bias Resistor Transistors(雙偏置電阻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSBA114YDXV6T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSBA114YDXV6T5 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSBA114YDXV6T5G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V Dual PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSBA114YF3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 10 k, R2 = 47 k |
| NSBA114YF3T5G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SOT-1123 NBRT TRNSTR RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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