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參數(shù)資料
| 型號： | NSB9435T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Current Bias Resistor Transistors(高強度電流偏置電阻晶體管) |
| 中文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 64K |
| 代理商： | NSB9435T1 |
NSB9435T1
http://onsemi.com
4
Figure 7. Output Capacitance
0.1
1
100
1000
1
100
C
o
,
V
R
, REVERSE VOLTAGE (V)
f = 1 MHz
T
A
= 25
°
C
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Active Region Safe Operating Area
1.0
0.1
10
1.0
0.001
10
100
0.01
0.1
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.5 ms
100 ms
5.0 ms
10
10
I
C
,
Figure 9. Power Derating
150
25
T, TEMPERATURE (
°
C)
4.0
3.0
2.0
1.0
0
50
75
100
125
T
A
T
C
P
D
,
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 8 is based on T
J(pk)
= 150 C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
150 C. T
J(pk)
may be calculated from the data in
Figure 10. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
Figure 10. Thermal Response
0.01
0.1
0.0001
t, TIME (seconds)
1.0
0.1
0.01
r
0.0001
0.001
0.001
10
100
1.0
R
1000
R
θ
JA
(t) = r(t)
θ
JA
θ
JA
= 174
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
A
= P
(pk)
θ
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NSB9435T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSB9435T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSB9435T1G | 功能描述:開關晶體管 - 偏壓電阻器 SS SOT233 BR XSTR PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| NSB9435T1G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Bias Resistor Transistor |
| NSBA113EDXV6T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT563 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列﹐預偏壓式 系列:- 標準包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
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