- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363665 > NSAM265SRA (National Semiconductor Corporation) CompactSPEECH Digital Speech Processors PDF資料下載
參數(shù)資料
| 型號： | NSAM265SRA |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | CompactSPEECH Digital Speech Processors |
| 中文描述： | CompactSPEECH數(shù)字語音處理器 |
| 文件頁數(shù)： | 16/58頁 |
| 文件大?。?/td> | 712K |
| 代理商： | NSAM265SRA |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁當(dāng)前第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁
2.0 Functional Description
(Continued)
2.8 FLASH/AFLASH ACCESS (NSAM265SF)
The NSAM265SF CompactSPEECH supports off-chip mem-
ory devices through Expansion Memory. Up to 64 Kbytes
(64K
c
8) of Expansion Memory are supported directly.
Nevertheless, the CompactSPEECH uses bits of the on-
chip I/O port (PB) to further extend the 64 Kbytes address
space, and with additional glue logic it can access up to 2
Mbytes address space.
The Expansion Memory mechanism is used to connect the
NSAM265SF CompactSPEECH to AFLASH and IVS ROM
devices.
ROM is connected to the CompactSPEECH using the data
bus, D(0:7), the address bus, A(0:15), the extended address
signals, EA(16:21), (EA21 serves as the ROM Output En-
able signal, ROMDOE), and Expansion Memory Chip Se-
lect, EMCS controls. If AFLASH is connected (NSAM265SF
only), the FLASHDOE signal is also used. The number of
extended address pins to use may vary, depending on the
size and configuration of the ROM and AFLASH devices.
Reading from Expansion Memory
An Expansion Memory read bus cycle starts at T1, when the
data bus is in TRI-STATE, and the address is driven on the
address bus. EMCS is asserted (0) on a T2W1 cycle. This
cycle is followed by three T2W cycles and one T2 cycle.
Data is sampled by the NSAM265SF at the end of the T2
cycle.
The transaction is terminated at T3, when EMCS becomes
inactive (1). The address remains valid until T3 is complete.
A T3H cycle is added after the T3 cycle. The address re-
mains valid until the end of T3H.
WR0 is inactive (1) during the read bus cycle.
2.9 FLASH/AFLASH SPECIFICATIONS
The NSAM265SF supports either the AMD Am29F040 Sec-
tor Erase Audio Flash 4-Mbit Memory or the Intel 28F008SA
8-Mbit AFLASH memory as message storage devices.
These devices are organized in 64-Kbytes blocks and sup-
port up to 100,000 block-erase cycles. For the exact fea-
tures of these devices please refer to the devices’ specifica-
tions.
AFLASH devices contain bad blocks. The NSAM265SF
supports devices with more good blocks than bad blocks
i.e., at least five good blocks on the AMD device, and at
least nine good blocks on the Intel device.
2.10 FLASH/AFLASH CONFIGURATIONS
The NSAM265SF supports up to two 28F008SA devices, or
up to four 29F040 devices. The actual configuration is se-
lected by the CFG command.
Figures 2-6, 2-7, 2-8 and 2-9 illustrate the minimum and
maximum configurations for each device in an environment
that contains an IVS ROM.
TL/EE/12378–9
FIGURE 2-6. One Intel Flash Device: No External Glue Logic
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NSAM266SVLJ | 4 Mbit Uniform Sector, Serial Flash Memory |
| NSAM266SA | 4 Mbit Uniform Sector, Serial Flash Memory |
| NSAM266SAA | 4 Mbit Uniform Sector, Serial Flash Memory |
| NSB8 | BASIC interpreter for Z80 family |
| NSB9435T1 | High Current Bias Resistor Transistors(高強(qiáng)度電流偏置電阻晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NSAM265SRAV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Solid-State Recorder |
| NSAM265SRAVLJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Solid-State Recorder |
| NSAM266SA | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:NSAM266SA CompactSPEECHTM Digital Speech Processor with Serial Flash Interface |
| NSAM266SAA | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:NSAM266SA CompactSPEECHTM Digital Speech Processor with Serial Flash Interface |
| NSAM266SAA/V | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:NSAM266SA CompactSPEECHTM Digital Speech Processor with Serial Flash Interface |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。