參數(shù)資料
型號: NSAM265SRA
廠商: National Semiconductor Corporation
英文描述: CompactSPEECH Digital Speech Processors
中文描述: CompactSPEECH數(shù)字語音處理器
文件頁數(shù): 21/58頁
文件大小: 712K
代理商: NSAM265SRA
3.0 Command Set
(Continued)
Mnemonic
Command
Type
S/A
Description
Opcode
Hex
Command Parameters
Return Value
Description
Length
Bytes
Description
Length
Bytes
SDET
S
Set Detectors Mask
10
Detectors Mask
1
None
SE
S
Skip to End of Message
24
None
None
SETD
S
Set Time and Day
0F
Time/Day
2
None
SF
S
Skip Forward
22
Length of Time
2
None
SMT
S
Set Message Tag
05
Message Tag
2
None
SO
A
Say One Word
07
Word Number
1
None
SPS
S
Set Playback Speed
16
Speed Value
1
None
SS
A
Say Sentence
1F
SentenceDn
1
None
SV
S
Set Vocabulary Type
20
Mode, Id
1
a
1
None
SW
A
Say Words
21
N, Word
1
. . . Word
n
1
a
n
None
TUNE
S
Tune Index
15
Index, Value
1
a
2
None
VC
S
Volume Control
28
Increment/Decrement
1
None
WRAM
S
Write RAM
17
Message Tag, Data
2
a
32
None
3.2 COMMANDS DESCRIPTION
The commands are listed in alphabetical order.
Each command indicates by a
&
the chips for which it is
intended. Commands which are not intended for a particular
chip are valid for that chip, but have no effect. Chip-specific
features of a command which is intended for both chips are
indicated by the chip name in the margin.
The execution time for all commands, when specified, in-
cludes the time required for the microcontroller to retrieve
the return value, where appropriate.
The execution time does not include the protocol timing
overhead, i.e., the execution times are measured from the
moment that the command is detected as valid until the
command is fully executed.
AMAP
NSAM265SR
&
Check and Map ARAMactionDnumber
NSAM265SF
V
This command runs diagnostics on the ARAMs, and returns
a 1-byte result. The following actions are performed accord-
ing to the 1-byte actionDnumber parameter:
Action 0
Checks the ARAM configuration. The return value is encod-
ed as follows:
Bits 0–1
Number of ARAM devices (1 or 2)
Bits 2–3
Number of ARAM columns in multiples of 1k
units (1 or 2)
Bits 4–6
Number of ARAM rows in multiples of 1k units (1,
2 or 4)
Action 1
This action is intended to be carried out on the production
line. It performs the following tests:
D Address line test
D Scan one row from start to end, and from end to start
D Write to line X and check that line Y is not written. (RAS/
CAS not connected test)
D Walking 1 and walking 0 on the data lines
Action 1 then performs Action 3 (see below) on the first 60
rows only. This allows you to record a short memo, of up to
5-seconds duration, to check the system and codec. Execu-
tion time is less than 1 second.
This action returns 0 if the ARAMs pass the connectivity
test, or the ID of the first ARAM to fail. The return value is
1-byte long. IDs are allocated according to the following
scheme:
TL/EE/12378–15
Action 2
Performs a one-pass test, clears the entire ARAM to 0, and
marks all the bad rows in the internal row table. If more than
0.5% nibbles in a row are bad, the row is mapped as bad. If
more than 200 of the rows are bad, the EVDERROR bit in
the status word and the ERRDARAM bit in the error word
are set to 1.
This operation does not detect ARAM cross-talk problems.
Action 2 of the AMAP command should be invoked immedi-
ately after the INIT command, and is valid only in the IDLE
state. If this command is not issued, the ARAM is consid-
ered as a DRAM (no errors).
The test takes up to 20 seconds.
Action 3
Performs a two-pass test to map, and return the number of
bad rows. If more than 0.5% nibbles in a row are bad. the
row is mapped as bad. If more than 5% of the rows are bad,
the EVDERROR bit in the status word and the ERRD
ARAM bit in the error word are set to 1. This diagnostic also
detects ARAM cross-talk problems.
21
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