參數(shù)資料
型號: NE650103M
廠商: Electronic Theatre Controls, Inc.
英文描述: NECS 10 W L & S-BAND POWER GaAs MESFET
中文描述: 鄰舍10冊
文件頁數(shù): 6/6頁
文件大小: 135K
代理商: NE650103M
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
07/28/2003
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
FREQUENCY
GHz
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
2.95
3.00
Note:
1. Gain Calculations:
|S
21
|
|S
|
S
11
S
21
S
12
S
22
MAG
0.953
0.954
0.954
0.954
0.955
0.953
0.951
0.953
0.951
0.952
0.954
0.953
0.954
0.952
0.949
0.952
0.95
0.952
0.954
0.951
0.951
0.951
0.949
0.953
0.951
0.949
0.952
0.951
0.948
0.951
0.951
0.95
0.953
0.951
0.947
0.95
0.948
0.948
0.952
0.946
0.947
0.944
0.94
0.943
0.944
0.939
0.941
0.938
0.931
0.932
0.932
ANG
-165.8
-167.4
-168.9
-170.2
-171.3
-172.3
-173.3
-174.3
-175.0
-175.7
-176.2
-176.7
-177.4
-177.8
-178.4
-178.9
-179.2
-179.8
179.9
179.6
179.0
178.7
178.4
178.0
177.8
177.4
177.0
176.7
176.3
175.9
175.7
175.3
175.0
174.8
174.3
174.0
173.8
173.2
173.2
172.8
172.2
172.0
171.5
171.0
170.8
170.5
169.8
169.5
169.0
168.4
168.1
MAG
3.860
3.516
3.201
3.003
2.775
2.566
2.442
2.281
2.132
2.062
1.932
1.876
1.797
1.723
1.675
1.608
1.559
1.500
1.433
1.428
1.330
1.315
1.254
1.209
1.182
1.141
1.060
1.142
1.021
1.024
1.020
0.995
0.963
0.956
0.947
0.934
0.895
0.880
0.894
0.845
0.887
0.778
0.889
0.773
0.777
0.785
0.761
0.707
0.765
0.675
0.718
ANG
95.8
96.4
94.9
95.1
93.8
94.6
92.9
94.5
92.1
94.7
92.5
93.7
93.2
93.3
92.4
93.4
90.8
92.6
90.5
91.1
90.2
89.8
89.9
90.6
88.6
91.1
89.1
92.1
89.1
91.2
91.5
90.8
88.6
94.9
86.9
93.5
87.5
91.5
90.3
90.5
86.2
94.2
84.5
90.5
86.5
89.9
86.9
88.1
88.3
90.0
86.3
MAG
0.010
0.010
0.010
0.010
0.011
0.011
0.011
0.011
0.011
0.011
0.011
0.011
0.011
0.012
0.012
0.012
0.012
0.013
0.012
0.013
0.013
0.013
0.013
0.013
0.013
0.014
0.014
0.014
0.015
0.014
0.015
0.015
0.016
0.015
0.017
0.015
0.017
0.016
0.017
0.016
0.019
0.018
0.018
0.020
0.017
0.020
0.019
0.020
0.019
0.021
0.018
ANG
31.4
32.0
34.3
35.7
37.5
37.8
40.9
41.2
43.1
47.8
46.6
51.1
50.5
53.5
54.7
57.7
56.6
60.4
60.9
61.7
65.5
65.0
66.5
69.5
72.2
70.3
76.5
74.7
78.3
79.4
79.7
79.8
82.9
81.1
84.6
88.7
85.4
91.6
90.5
94.2
90.3
101.1
88.5
100.4
95.2
96.1
98.1
100.5
97.2
103.4
104.3
MAG
0.754
0.755
0.756
0.755
0.754
0.754
0.755
0.755
0.755
0.755
0.756
0.755
0.756
0.756
0.756
0.757
0.758
0.756
0.755
0.757
0.757
0.757
0.758
0.757
0.758
0.758
0.759
0.76
0.759
0.76
0.759
0.759
0.763
0.759
0.76
0.76
0.759
0.76
0.756
0.758
0.757
0.756
0.756
0.754
0.754
0.752
0.75
0.751
0.746
0.746
0.743
ANG
179.0
178.5
178.2
178.0
177.7
177.4
177.2
176.9
176.6
176.4
176.1
175.9
175.8
175.4
175.4
175.1
174.8
174.6
174.2
174.0
173.7
173.3
173.1
172.6
172.4
172.0
171.8
171.7
171.3
171.0
170.9
170.5
170.4
170.0
169.7
169.3
169.1
169.0
168.4
167.8
167.8
167.0
166.6
166.2
165.6
165.2
164.6
164.2
163.8
163.0
162.9
NE650103M
V
DS
= 12 V, I
DS
= 1.5 A
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
NE650103M
相關(guān)PDF資料
PDF描述
NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE6510179A 1W L-Band Power GaAs HJ-FET(N溝道結(jié)型場效應(yīng)管)
NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NE661M04-T2 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE650103M-A 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6501077 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6501077_00 制造商:CEL 制造商全稱:CEL 功能描述:L/S BAND MEDIUM POWER GaAs MESFET
NE650R279A 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET
NE650R279A-T1 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET