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參數(shù)資料
| 型號： | NE650103M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NECS 10 W L & S-BAND POWER GaAs MESFET |
| 中文描述： | 鄰舍10冊 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | NE650103M |
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C)
PART NUMBER
PACKAGE OUTLINE
CHARACTERISTICS
Power Out at 1dB Gain Compression
NE650103M
3M
TYP
40.0
SYMBOLS
P
1dB
UNITS
dBm
MIN
39.0
MAX
TEST CONDITIONS
G
L
Linear Gain (at Pin
≤
23 dBm)
dB
10.0
11.0
η
ADD
Power Added Efficiency
%
45
I
DSS
Saturated Drain Current
A
2.0
5.0
7.0
V
DS
= 2.5 V; V
GS
= 0 V
V
P
Pinch-Off Voltage
V
-4.0
-2.5
-1.0
V
DS
= 2.5 V; I
DS
= 23 mA
R
TH
Thermal Resistance
°
C/W
4.0
4.5
Channel to Case
NEC'
S
10 W L & S-BAND
POWER GaAs MESFET
FEATURES
LOW COST PLASTIC PACKAGE
USABLE TO 2.7 GHz:
PCS, W-CDMA, WLL, Satellite Uplink, BWA
HIGH OUTPUT POWER:
40 dBm TYP
HIGH POWER ADDED EFFICIENCY:
45 % TYP at 2.3 GHz
LOW THERMAL RESISTANCE:
4.0
°
C/W
LEAD-FREE
NE650103M
DESCRIPTION
NEC's NE650103M is a 10 W GaAs MESFET designed for
PCS, W-CDMA, WLL transmitter applications. It is capable of
delivering 10 Watts of output power with high linear gain, high
efficiency and excellent linearity. Reliability and performance
uniformity are assured by NEC's stringent quality and control
procedures
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 3M
F
C
E
C
f = 2.3 GHz, V
DS
= 10.0 V
Rg = 100
I
DSQ
≤
1.5 A (RF OFF)
California Eastern Laboratories
GATE
DRAIN
SOURCE
20.32 ± 0.15
8.54 ± 0.2
0.15 ± 0.05
2.04 ± 0.3
4
1
5
1
2-
φ
3.3 ± 0.3
14.27 ± 0.15
3.5 ± 0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE650103M-A | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE6501077 | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE6501077_00 | 制造商:CEL 制造商全稱:CEL 功能描述:L/S BAND MEDIUM POWER GaAs MESFET |
| NE650R279A | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
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