參數(shù)資料
型號： NE6510179A
廠商： NEC Corp.
英文描述： 1W L-Band Power GaAs HJ-FET(N溝道結(jié)型場效應(yīng)管)
中文描述： 1W的L波段功率GaAs黃建忠場效應(yīng)管（不適用溝道結(jié)型場效應(yīng)管）
文件頁數(shù)： 1/8頁
文件大小： 77K
代理商： NE6510179A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
N-CHANNEL GaAs HJ-FET
NE6510179A
1 W L-BAND POWER GaAs HJ-FET
Document No. P13496EJ4V0DS00 (4th edition)
Date Published August 2000 N CP(K)
Printed in Japan
DATA SHEET
The mark
shows major revised points.
1998, 2000
DESCRIPTION
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile
communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear
gain, high efficiency and excellent distortion.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
GaAs HJ-FET structure
High output power
: P
out
= +31.5 dBm TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, P
in
= +20 dBm
P
out
= +32.5 dBm TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= +25 dBm
P
out
= +35.0 dBm TYP. @V
DS
= 5.0 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= +25 dBm
: G
L
= 15 dB TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, P
in
= 0 dBm
G
L
= 10 dB TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= 0 dBm
G
L
= 10 dB TYP. @V
DS
= 5.0 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= 0 dBm
High power added efficiency : 70% TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 900 MHz, P
in
= +20 dBm
58% TYP. @V
DS
= 3.5 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= +25 dBm
56% TYP. @V
DS
= 5.0 V, I
Dset
= 200 mA, f = 1 900 MHz, P
in
= +25 dBm
High linear gain
ORDERING INFORMATION
Part Number
Package
Supplying Form
NE6510179A-T1
79A
12 mm wide embossed taping
Qty 1 kpcs/reel
Remark
To order evaluation samples, consult your NEC sales representative
(Part number for sample order: NE6510179A).
Caution
Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE6510179A-A 功能描述:射頻GaAs晶體管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6510179A-EVPW19 功能描述:射頻GaAs晶體管 For NE6510179A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6510179A-EVPW24 功能描述:射頻GaAs晶體管 For NE6510179A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6510179A-EVPW26 功能描述:射頻GaAs晶體管 For NE6510179A-A Power at 2.6 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE6510179A-EVPW35 功能描述:射頻GaAs晶體管 For NE6510179A-A Power at 3.5 GHz RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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