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參數(shù)資料
| 型號(hào)： | NE6501077 |
| 廠商： | NEC Corp. |
| 英文描述： | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 10冊(cè)，S波段砷化鎵場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 37K |
| 代理商： | NE6501077 |
1996
PRELIMINARY DATA SHEET
GaAs MES FET
NE6501077
10 W L, S-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE6501077 is power GaAs FET which provides
high gain, high efficiency and high output power in L, S
band.
To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
FEATURES
Class A operation
High output power: 39.5 dBm (typ)
High gain: 10.5 dB (typ)
High power added efficiency: 40 % (typ)
Hermetically sealed ceramic package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Temperature Cycling
* T
C
= 25 C
V
DSX
V
GDX
V
GSX
I
D
I
G
P
T
(*)
T
ch
T
stg
T
∞
15
–18
–12
9.0
50
50
175
V
V
V
A
mA
W
C
C
C
–65 to +175
–40 to +120
Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive
device.
Document No. P10978EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
17.5 ±0.5
14.3
SOURCE
GATE
1.0 ±0.1
6.35 ±0.4
4.0 MIN BOTH
LEADS
DRAIN
R1.25, 2 PLACES
2.5
8.9 ±0.4
3.8 MAX.
1.0
0.2 MAX.
2.26 ±0.4
0.1
+0.06
–0.02
PACKAGE DIMENSIONS (UNIT: mm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE6501077_00 | 制造商:CEL 制造商全稱:CEL 功能描述:L/S BAND MEDIUM POWER GaAs MESFET |
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| NE650R279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R479A | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
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