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參數(shù)資料
| 型號： | NE6501077 |
| 廠商： | NEC Corp. |
| 英文描述： | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 10冊，S波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | NE6501077 |
NE6501077
4
S-PARAMETER
V
DS
= 9.0 V, I
DS
= 1 000 mA, V
GS
= –1.514 V, I
G
= 0.0 mA
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.050
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.010
1.100
1.200
1.300
1.400
1.500
1.600
1.700
1.800
1.900
2.000
2.100
2.200
2.300
2.400
2.500
2.600
2.700
2.800
2.900
3.000
3.100
3.200
3.300
3.400
3.500
3.600
3.700
3.800
3.900
4.000
0.990
0.972
0.971
0.963
0.972
0.969
0.969
0.975
0.972
0.974
0.969
0.970
0.978
0.972
0.978
0.972
0.977
0.974
0.968
0.966
0.972
0.969
0.973
0.961
0.966
0.962
0.964
0.959
0.963
0.958
0.961
0.953
0.955
0.955
0.956
0.952
0.954
0.953
0.959
0.955
0.958
0.954
–77.1
–115.8
–146.6
–159.1
–166.4
–170.7
–174.6
–177.1
–179.4
178.5
176.1
176.1
174.5
172.6
170.8
169.2
167.4
166.0
164.6
162.6
161.3
159.7
158.5
156.8
154.7
153.3
151.6
150.1
148.2
146.5
144.9
143.2
141.2
139.5
137.9
136.3
134.7
132.6
131.0
129.0
127.2
125.2
18.297
12.578
7.135
4.862
3.726
2.996
2.516
2.183
1.939
1.722
1.556
1.545
1.436
1.328
1.243
1.160
1.106
1.044
0.992
0.951
0.921
0.882
0.858
0.825
0.808
0.784
0.768
0.751
0.738
0.722
0.714
0.699
0.696
0.689
0.683
0.675
0.670
0.667
0.668
0.667
0.671
0.671
140.3
120.5
103.3
95.7
90.3
87.0
83.4
80.9
78.3
75.9
72.8
72.6
70.4
68.0
65.5
63.1
60.8
58.2
56.1
53.2
50.8
48.4
46.4
43.8
40.7
38.5
35.9
33.5
30.9
28.3
25.8
22.9
19.9
17.4
15.0
12.5
9.8
6.6
4.0
0.9
–1.6
–4.2
0.005
0.007
0.007
0.008
0.008
0.009
0.009
0.010
0.010
0.010
0.011
0.011
0.011
0.012
0.013
0.013
0.015
0.015
0.016
0.016
0.017
0.018
0.020
0.021
0.022
0.023
0.025
0.026
0.027
0.029
0.030
0.031
0.034
0.035
0.037
0.038
0.040
0.042
0.045
0.047
0.049
0.051
16.2
16.7
28.1
25.8
26.1
26.1
27.9
31.9
35.2
33.7
37.4
36.8
33.8
38.2
40.7
40.4
40.4
40.6
40.4
39.3
41.4
42.8
42.1
40.9
41.1
38.5
37.2
35.9
33.7
34.1
33.2
29.9
28.9
26.4
24.5
23.1
21.5
20.0
18.1
15.5
12.9
11.6
0.822
0.847
0.863
0.863
0.869
0.868
0.867
0.872
0.881
0.865
0.862
0.863
0.867
0.863
0.867
0.861
0.871
0.861
0.857
0.857
0.867
0.857
0.861
0.849
0.854
0.852
0.857
0.852
0.853
0.851
0.851
0.842
0.844
0.839
0.839
0.833
0.831
0.827
0.828
0.820
0.813
0.805
–177.8
–178.1
179.5
178.1
176.3
175.5
174.0
173.3
172.9
171.3
169.8
169.9
168.9
167.8
166.9
165.9
165.0
163.4
162.7
161.2
159.9
158.5
157.6
156.1
154.2
153.0
151.4
149.9
148.5
146.7
145.6
143.9
142.1
140.7
139.5
138.1
136.9
135.3
134.2
132.5
131.1
129.8
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|---|---|
| NE6510179A | 1W L-Band Power GaAs HJ-FET(N溝道結(jié)型場效應(yīng)管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE6501077_00 | 制造商:CEL 制造商全稱:CEL 功能描述:L/S BAND MEDIUM POWER GaAs MESFET |
| NE650R279A | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R479A | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
| NE650R479A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.4 W L, S-BAND POWER GaAs MES FET |
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