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參數(shù)資料
| 型號： | NE6501077 |
| 廠商： | NEC Corp. |
| 英文描述： | 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 10冊，S波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 37K |
| 代理商： | NE6501077 |
NE6501077
2
MAXIMUM OPERATION RANGE
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
V
DS
–
10
10
V
Channel Temperature
T
ch
–
–
130
C
Input Power
Gcomp
–
–
3
dBcomp
Gate Resistance
Rg
–
–
100
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Saturated Drain Current
Idss
2.0
4.5
7.0
A
Vds = 1.5 V, Vgs = 0 V
Pinch-off Voltage
V
P
–3.5
–2.0
–0.5
V
Vds = 2.5 V, Ids = 30 mA
Transconductance
gm
–
2600
–
mS
Vds = 2.5 V, Ids = 2 A
Thermal Resistance
R
th
–
3.5
4.0
C/W
Channel to Case
PERFORMANCE SPECIFICATIONS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITION
Output Power
P
out
39.0
39.5
–
dBm
f = 2.3 GHz, Vds = 10 V
Ids
≤
1.0 A, Pin = 31.0 dBm
Rg = 100
Gate to Source Current
Igs
–10
–
10
mA
Power Added Efficiency
η
add
–
40
–
%
Linear Gain
G
L
9.5
10.5
–
dB
Pin
≤
23 dBm(
*
)
*
The other are the same as the above conditions.
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