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參數(shù)資料
| 型號： | NE650103M |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NECS 10 W L & S-BAND POWER GaAs MESFET |
| 中文描述： | 鄰舍10冊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | NE650103M |
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
°
C)
SYMBOLS
V
DS
V
GD
V
GS
I
DS
I
GF
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
A
mA
W
°
C
°
C
RATINGS
15
-18
-7.0
5
45
33
175
-65 to +150
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
g
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS
V
°
C
dB
TYP
10.0
MAX
10.0
150
3.0
100
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
NE650103M
NE650103M
3M
PART NUMBER
PACKAGE
ORDERING INFORMATION
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
T
D
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Case Temperature, T
C
(
°
C)
33 W
18
43
35
30
25
20
15
10
0
150
200
175
100
50
0
RABSOUEMAXMUM
V
GS
= 0 V
I
DS
= 1 A/Div
V
DS
= 0.5 V/Div
V
GS
= -0.5 V
V
GS
= -2.5 V
0
1
0
3
2
5
4
7
6
8
10
9
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
= -1.5 V
V
GS
= -1.0 V
V
GS
= -0.5 V
V
GS
= -2.0 V
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Drain To Source Voltage, (V)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE650103M-A | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6501077 | 功能描述:射頻GaAs晶體管 L&S Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE6501077_00 | 制造商:CEL 制造商全稱:CEL 功能描述:L/S BAND MEDIUM POWER GaAs MESFET |
| NE650R279A | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
| NE650R279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:0.2 W L, S-BAND POWER GaAs MES FET |
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