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參數資料
| 型號： | NDS8852H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary MOSFET Half Bridge |
| 中文描述： | 4300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數： | 8/12頁 |
| 文件大小： | 349K |
| 代理商： | NDS8852H |
NDS8852H Rev. C1
Typical Thermal Characteristics
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
DC
1s
10s
10ms
100ms
100us
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
RDS(ON) LIMIT
1s
10s
DC
100ms
10ms
1ms
100us
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 26. N-Ch Maximum Safe Operating
Area
.
Figure 27. P-Ch Maximum Safe Operating
Area
.
0
0.2
0.4
0.6
0.8
2
1
1
2
3
4
5
2oz COPPER MOUNTING PAD AREA (in )
-
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
D
Figure 25. P-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
0
0.2
0.4
0.6
0.8
2
1
1
2
3
4
5
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = 10V
Figure 24. N-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 28. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關PDF資料 |
PDF描述 |
|---|---|
| NDS8858H | Complementry MOSFET Half Bridge |
| NDS8926 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NDS8858H | 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8858H | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8926 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8934 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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