參數(shù)資料
型號: NDS8852H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Complementary MOSFET Half Bridge
中文描述: 4300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 4/12頁
文件大?。?/td> 349K
代理商: NDS8852H
NDS8852H Rev. C1
0
1
2
3
0
5
10
15
20
V , DRAIN-SOURCE VOLTAGE (V)
I
6.0
5.0
4.5
4.0
3.5
V =10V
D
8.0
3.0
0
3
6
9
12
15
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = 3.5V
R
D
8.0
10
6.0
4.5
5.0
4.0
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = -10V
I = -3.4A
R
D
-5
-4
-3
-2
-1
0
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I
V = -10V
D
-4.0
-6.0
-5.0
-4.5
-7.0
-3.5
-8.0
-3.0
-5.5
-15
-12
-9
-6
-3
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
R
D
V = -3.5V
-10
-6.0
-4.0
-8.0
-7.0
-5.0
-4.5
-5.5
Typical Electrical Characteristics
Figure 1. N-Channel On-Region Characteristics.
Figure 2. P-Channel On-Region Characteristics.
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
Figure 5. N-Channel On-Resistance Variation
with Temperature.
Figure 6. P-Channel On-Resistance Variation
with Temperature.
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
V = 10V
I = 3.4A
R
D
相關(guān)PDF資料
PDF描述
NDS8858H Complementry MOSFET Half Bridge
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
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NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8858H 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8858H 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8926 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube