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參數(shù)資料
| 型號： | NDS8852H |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Complementary MOSFET Half Bridge |
| 中文描述： | 4300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 349K |
| 代理商： | NDS8852H |
February 1996
NDS8852H
Complementary MOSFET Half Bridge
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
30
-30
V
V
GSS
Gate-Source Voltage
20
-20
V
I
D
Drain Current - Continuous
(Note 1a & 2)
4.3
-3.4
A
- Pulsed
15
-10
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Single Device)
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Single Device)
(Note 1a)
50
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Single Device)
(Note 1)
25
°C/W
NDS8852H Rev. C1
These Complementary MOSFET half bridge devices are
produced using Fairchild's proprietary, high cell density,
DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage half bridge
applications or CMOS applications when both gates are
connected together.
N-Channel 4.3A, 30V, R
DS(ON)
=0.08
@ V
GS
=10V.
P-Channel -3.4A, -30V, R
DS(ON)
=0.13
@ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Matched pair for equal input capacitance and power capability
.
P-Gate
Vout
Vout
Vout
Vout
V-
V+
N -Gate
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDS8858H | Complementry MOSFET Half Bridge |
| NDS8926 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8858H | 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8858H | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| NDS8926 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8928 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8934 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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