參數(shù)資料
型號(hào)： NDS8852H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Complementary MOSFET Half Bridge
中文描述： 4300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁數(shù)： 3/12頁
文件大?。?/td> 349K
代理商： NDS8852H
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 3)
t
D(on)
Turn - On Delay Time
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
N-Ch
10
15
ns
P-Ch
9
40
t
r
Turn - On Rise Time
N-Ch
13
20
ns
P-Ch
21
40
t
D(off)
Turn - Off Delay Time
N-Ch
21
50
ns
P-Ch
21
90
t
f
Turn - Off Fall Time
N-Ch
5
50
ns
P-Ch
8
50
Q
g
Total Gate Charge
N-Channel
V
= 10 V,
I
= 3.4 A, V
GS
= 10 V
P-Channel
V
= -10 V,
I
D
= -3.4 A, V
GS
= -10 V
N-Ch
9.5
27
nC
P-Ch
10
25
Q
gs
Gate-Source Charge
N-Ch
1.5
P-Ch
1.6
Q
gd
Gate-Drain Charge
N-Ch
2.6
P-Ch
2.7
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
2.1
A
P-Ch
-2.1
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
N-Channel
V
GS
= 0 V, I
F
= 2.1 A, dI
F
/dt = 100 A/μs
P-Channel
V
GS
= 0 V, I
F
= -2.1 A, dI
F
/dt = 100 A/μs
N-Ch
0.8
1.2
V
P-Ch
-0.8
-1.2
t
rr
Reverse Recovery Time
N-Ch
100
ns
P-Ch
100
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50
o
C/W when mounted on a 1 in
2
pad of 2oz cpper.
b. 105
o
C/W when mounted on a 0.04 in
2
pad of 2oz cpper.
c. 125
o
C/W when mounted on a 0.006 in
2
pad of 2oz cpper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDS8852H Rev. C1
1a
1b
1c
相關(guān)PDF資料
PDF描述
NDS8858H Complementry MOSFET Half Bridge
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8858H 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8858H 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8926 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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