參數(shù)資料
型號(hào)： NDS8852H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Complementary MOSFET Half Bridge
中文描述： 4300 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SO-8
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 349K
代理商： NDS8852H
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
N-Ch
30
V
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 24 V, V
GS
= 0 V
P-Ch
-30
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
2
μA
T
J
= 55
o
C
25
μA
V
DS
= -24 V, V
GS
= 0 V
P-Ch
-2
μA
T
J
= 55
o
C
-25
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
All
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 3)
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
1
1.7
2.8
V
T
J
= 125
o
C
0.7
1.2
2.2
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-1
-1.6
-2.8
T
J
= 125
o
C
-0.85
-1.25
-2.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 3.4 A
N-Ch
0.06
0.08
T
J
= 125
o
C
0.08
0.13
V
GS
= 4.5 V, I
D
= 2.8 A
V
GS
= -10 V, I
D
= -3.4 A
0.08
0.11
P-Ch
0.11
0.13
T
J
= 125
o
C
0.15
0.21
V
GS
= -4.5 V, I
D
= -2.8 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 15 V, I
D
= 3.4 A
V
DS
= -15 V, I
D
= -3.4 A
0.17
0.2
I
D(on)
On-State Drain Current
N-Ch
10
A
P-Ch
-10
g
FS
Forward Transconductance
N-Ch
6
S
P-Ch
4
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
300
pF
P-Ch
330
C
oss
Output Capacitance
N-Ch
190
pF
P-Ch
190
C
rss
Reverse Transfer Capacitance
N-Ch
70
pF
P-Ch
70
NDS8852H Rev. C1
相關(guān)PDF資料
PDF描述
NDS8858H Complementry MOSFET Half Bridge
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8858H 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8858H 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8926 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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