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參數(shù)資料
| 型號： | NDS8928 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5.5 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOIC-8 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 354K |
| 代理商： | NDS8928 |
July 1996
NDS8928
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
Drain-Source Voltage
20
-20
V
V
GSS
Gate-Source Voltage
8
-8
V
I
D
Drain Current - Continuous
(Note 1a)
5.5
-3.8
A
- Pulsed
20
-15
P
D
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDS8928 Rev.D
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very high
density process is especially tailored to minimize on-state
resistance and provide superior switching performance. These
devices are particularly suited for low voltage applications such
as notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
N-Channel 5.5A, 20V, R
DS(ON)
=0.035
@ V
GS
=4.5V
R
DS(ON)
=0.045
@ V
GS
=2.7V
P-Channel -3.8A, -20V, R
DS(ON)
=0.07
@ V
GS
=-4.5V
R
DS(ON)
=0.1
@ V
GS
=-2.7V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8934 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8947 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8958 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8961 | Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8934 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8936 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8936 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS8947 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8947 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8 |
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