參數(shù)資料
型號(hào)： NDS8928
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述： 5.5 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 354K
代理商： NDS8928
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
N-Ch
20
V
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 16 V, V
GS
= 0 V
P-Ch
-20
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55
o
C
10
μA
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
All
100
nA
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Reverse
V
GS
= -8 V, V
DS
= 0 V
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
0.4
0.6
1
V
T
J
= 125
o
C
0.3
0.35
0.8
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-0.4
-0.7
-1
T
J
= 125
o
C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 5.5 A
N-Ch
0.029
0.035
T
J
= 125
o
C
0.04
0.063
V
GS
= 2.7 V, I
D
= 5 A
V
GS
= -4.5 V, I
D
= -3.8 A
0.035
0.045
P-Ch
0.06
0.07
T
J
= 125
o
C
0.085
0.126
V
GS
= -2.7 V, I
D
= -3.2 A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= 5.5 A
V
DS
= -10 V, I
D
= -3.8 A
0.082
0.1
I
D(on)
On-State Drain Current
N-Ch
20
A
10
P-Ch
-15
-5
g
FS
Forward Transconductance
N-Ch
14
S
P-Ch
9
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
760
pF
P-Ch
1120
C
oss
Output Capacitance
N-Ch
440
pF
P-Ch
470
C
rss
Reverse Transfer Capacitance
N-Ch
160
pF
P-Ch
145
NDS8928 Rev.D
相關(guān)PDF資料
PDF描述
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8936 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8936 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS8947 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8947 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
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