參數(shù)資料
型號(hào)： NDS8928
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor
中文描述： 5.5 A, 20 V, 0.035 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 8/13頁(yè)
文件大?。?/td> 354K
代理商： NDS8928
NDS8928 Rev.D
Typical Thermal Characteristics:
N & P-Channel
Figure 24. N-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
0
0.1
2oz COPPER MOUNTING PAD AREA (in )
0.2
0.3
0.4
2
0.5
2
2.5
3
3.5
4
4.5
-
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -4.5V
o
D
Figure 25. P-Ch Maximum Steady- State
Drain Current versus Copper Mounting
Pad Area.
Figure 26. N-Channel Maximum Safe Operating
Area.
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.03
0.1
0.3
1
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
V = -4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
100ms
10ms
1s
10s
DC
100us
Figure 27. P-Channel Maximum Safe Operating
Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
Power for Single Operation
Total Power for Dual Operation
1a
Figure 23. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0
0.1
2oz COPPER MOUNTING PAD AREA (in )
0.2
0.3
0.4
0.5
3
4
5
6
7
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 4.5V
o
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
3
10
20
30
V , DRAIN-SOURCE VOLTAGE (V)
I
D
DC
10ms
100ms
1s
10s
1 100us
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
相關(guān)PDF資料
PDF描述
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8947 Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8934 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8936 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8936 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8
NDS8947 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8947 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
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