參數(shù)資料
型號： NDS0610
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強型MOS場效應管（漏電流-0.12A, 漏源電壓-60V，導通電阻10Ω）)
中文描述： 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁數(shù)： 2/13頁
文件大小： 553K
代理商： NDS0610
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -10 μA
V
DS
= -48 V, V
GS
= 0 V
-60
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 125°C
-200
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
10
nA
Gate - Body Leakage, Reverse
-10
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -1 mA
-1
-2.4
-3.5
V
T
J
= 125°C
-0.6
-2.1
-3.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -0.5 A
3.6
10
T
J
= 125°C
5.9
16
V
GS
= -4.5 V, I
D
= -0.25 A
5.2
20
T
J
= 125°C
7.9
30
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -10 V
V
GS
= -4.5 V, V
DS
= -10 V
V
DS
= -10 V, I
D
= -0.1 A
-0.6
-1.6
A
-0.35
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
Forward Transconductance
70
170
mS
V
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
40
60
pF
11
25
pF
3.2
5
pF
t
D(on)
Turn - On Delay Time
V
DD
= -25 V, I
D
= -0.18 A,
V
GS
= -10 V, R
GEN
= 25
7
10
nS
t
r
t
D(off)
Turn - On Rise Time
5
15
nS
Turn - Off Delay Time
13
15
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
10
20
nS
Total Gate Charge
V
= -48 V,
I
D
= -0.5 A, V
GS
= -10 V
1.43
nC
Gate-Source Charge
0.6
nC
Gate-Drain Charge
0.25
nC
I
S
I
SM
V
SD
Maximum Continuous Source Current
-0.18
A
Maximum Pulse Source Current
(Note 1)
-1
A
Drain-Source Diode Forward Voltage
V
= 0 V, I
S
= -0.5 A
(Note 1)
-1.2
-1.5
V
T
J
= 125°C
-0.98
-1.3
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
= -0.5 A,
dI
F
/dt = 100 A/μs
40
ns
I
rr
Reverse Recovery Current
2.8
A
Note:
1. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
NDS0610.SAM
相關PDF資料
PDF描述
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強型場效應管（漏電流3A, 漏源電壓20V，導通電阻0.06Ω）)
NDH8303N N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強型MOS場效應管（漏電流3.8A, 漏源電壓20V，導通電阻0.035Ω）)
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強型MOS場效應管（漏電流5.8A, 漏源電壓20V，導通電阻0.03Ω）)
相關代理商/技術參數(shù)
參數(shù)描述
NDS0610 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0610_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_NL 功能描述:MOSFET 60V 10 OHM P-CH MOSFETSOT-23 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_Q 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610X 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 60V 0.12A SOT23
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*