參數(shù)資料
型號(hào)： NDS0610
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： P-Channel Enhancement Mode Field Effect Transistor（-0.12A，-60V，10Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-0.12A, 漏源電壓-60V，導(dǎo)通電阻10Ω）)
中文描述： 120 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOT-23, 3 PIN
文件頁(yè)數(shù)： 1/13頁(yè)
文件大小： 553K
代理商： NDS0610
April 1995
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
NDF0610
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDF0610
NDS0610
Units
V
DSS
V
DGR
Drain-Source Voltage
-60
V
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
-60
V
V
GSS
±20
V
- Nonrepetitive (t
P
< 50 μs)
±30
V
I
D
Drain Current - Continuous
-0.18
-0.12
A
- Pulsed
-1
P
D
Maximum Power Dissipation T
A
= 25
°
C
Derate above 25
°
C
0.8
0.36
W
5
2.9
mW/
o
C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
-55 to 150
°C
Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds
300
°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
200
350
°C/W
NDS0610.SAM
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.
-0.18 and -0.12A, -60V. R
DS(ON)
= 10
Voltage controlled p-channel small signal switch
High density cell design for low R
DS(ON)
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
G
D
S
SOT-23
NDS0610
S
D
G
1998 Fairchild Semiconductor Corporation
S
G
D
TO-92
相關(guān)PDF資料
PDF描述
NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor（3A，20V，0.06Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω）)
NDH8303N N-Channel Enhancement Mode Field Effect Transistor（3.8A，20V，0.035Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω）)
NDH8304 Dual P-Channel Enhancement Mode Field Effect Transistor
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流5.8A, 漏源電壓20V，導(dǎo)通電阻0.03Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS0610 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0610_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_NL 功能描述:MOSFET 60V 10 OHM P-CH MOSFETSOT-23 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610_Q 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS0610X 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 60V 0.12A SOT23
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*