參數(shù)資料
型號(hào)： NDH8304
廠(chǎng)商： Fairchild Semiconductor Corporation
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙P溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 70K
代理商： NDH8304
May 1997
NDH8304P
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDH8304P
Units
V
DSS
V
GSS
Drain-Source Voltage
-20
V
Gate-Source Voltage
±8
V
I
D
Drain Current - Continuous
(Note 1)
-2.7
A
- Pulsed
-10
P
D
Maximum Power Dissipation
(Note 1)
0.8
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8304P Rev.C
SuperSOT
TM
-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management
and other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in a very small
outline surface mount package.
-2.7 A, -20 V. R
DS(ON)
= 0.07
@ V
GS
= -4.5 V
R
DS(ON)
= 0.095
@ V
GS
= -2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
7
8
2
6
3
4
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流5.8A, 漏源電壓20V，導(dǎo)通電阻0.03Ω）)
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導(dǎo)通電阻0.13Ω）)
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8304P 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
NDH8304P_Q 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH831N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8320C 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
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