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參數(shù)資料
| 型號： | NDH8304 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙P溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NDH8304 |
NDH8304P Rev.C
Figure 14. Maximum Safe Operating Area.
Typical Electrical and Thermal Characteristics
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change
depending on the circuit board design.
Figure 13. Transconductance Variation with Drain
Current and Temperature.
-20
-16
-12
-8
-4
0
0
4
8
12
16
20
I , DRAIN CURRENT (A)
g
V = -4.5V
TJ
25°C
F
125°C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.01
0.1
1
T
Single Pulse
D = 0.5
0.1
0.05
0.01
0.2
Duty Cycle, D = t / t
2
P(pk)
1
t
1
t
2
r
0.02
R (t) = r(t) * R
R = See Note 1
T - T = P * R (t)
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.05
0.1
0.5
1
2
5
10
15
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON)LMT
D
A
DC
1s
100ms
10ms
1ms
10s
V = -4.5V
SINGLE PULSE
R = See Note 1
T = 25°C
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8304P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
| NDH831N | N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強型MOS場效應管（漏電流5.8A, 漏源電壓20V，導通電阻0.03Ω）) |
| NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3A, 漏源電壓20V，導通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導通電阻0.13Ω）) |
| NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓20V，導通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
| NDH832P | P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應管（漏電流-4.2A, 漏源電壓-20V，導通電阻0.06Ω）) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8304P | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| NDH8304P_Q | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH831N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8320C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor |
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