參數(shù)資料
型號(hào)： NDH8304
廠商： Fairchild Semiconductor Corporation
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述： 雙P溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 4/6頁
文件大小： 70K
代理商： NDH8304
NDH8304P Rev.C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-4
-3
-2
-1
V , DRAIN-SOURCE VOLTAGE (V)
0
-15
-12
-9
-6
-3
0
I
D
-3.5
-2.0
-3.0
-2.5
-1.5
V =-4.5V
-2.7
-15
-12
-9
-6
-3
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
-2.7
-4.5
-2.5
-3.0
-3.5
V = -2.0V
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
T , JUNCTION TEMPERATURE (°C)
D
R
D
V = -4.5V
I = -2.7A
-2.5
-2
-1.5
-1
V , GATE TO SOURCE VOLTAGE (V)
-0.5
-8
-6
-4
-2
0
I
D
V = -5V
TJ
125°C
25°C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
G
V
G
I = -250μA
V = V
GS
-15
-12
-9
-6
-3
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
R
D
V = -4.5V
GS
J
25°C
-55°C
相關(guān)PDF資料
PDF描述
NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH831N N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流5.8A, 漏源電壓20V，導(dǎo)通電阻0.03Ω）)
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3A, 漏源電壓20V，導(dǎo)通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導(dǎo)通電阻0.13Ω）)
NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH8304P 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8304P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8
NDH8304P_Q 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH831N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8320C 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor
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