參數(shù)資料
型號(hào)： NDH8321C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
中文描述： 3800 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 251K
代理商： NDH8321C
January 1999
NDH8321C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
20
-20
V
Gate-Source Voltage
±8
±8
V
Drain Current - Continuous
(Note 1)
3.8
-2.7
A
- Pulsed
15
-10
P
D
T
J
,T
STG
Power Dissipation for Single Operation
(Note 1)
0.8
W
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8321C Rev.C1
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state
resistance
and
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
provide
superior
switching
N-Ch 3.8 A, 20 V, R
DS(ON)
=0.035
@ V
GS
= 4.5 V
R
DS(ON)
=0.045
@ V
GS
=2.7 V
P-Ch -2.7 A, -20V, R
DS(ON)
=0.07
@ V
GS
= -4.5 V
R
DS(ON)
=0.095
@ V
GS
= -2.7 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
7
8
6
4
3
2
D1
D2
D2
D1
G1
G2
S1
S2
SuperSOT -8
TM
Mark: .8321C
1999 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
NDH8447 P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH832P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH8447 制造商:Fairchild Semiconductor Corporation 功能描述:
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