參數(shù)資料
型號(hào)： NDH8321C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓20V，導(dǎo)通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導(dǎo)通電阻0.07Ω）)
中文描述： 3800 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁(yè)數(shù)： 8/12頁(yè)
文件大小： 251K
代理商： NDH8321C
NDH8321C Rev.C1
Typical Thermal Characteristics:
N & P-Channel
Figure 23. N-Channel Maximum Safe Operating
Area.
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
0.01
0.03
0.1
0.3
1
3
10
30
I
D
RDS(ON) LIMIT
V = 4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
GS
10s
DC
100ms
1s
100us
10ms
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.05
0.1
0.5
1
2
5
10
15
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON)LMT
D
A
DC
1s
100ms
10ms
1ms
10s
V = -4.5V
SINGLE PULSE
R = See Note 1
T = 25°C
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.01
0.1
1
T
Single Pulse
D = 0.5
0.1
0.05
0.01
0.2
Duty Cycle, D = t / t
2
P(pk)
t
1
t
2
r
0.02
R (t) = r(t) * R
R = See Note 1
T - T = P * R (t)
Figure 24. P-Channel Maximum Safe Operating
Area.
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 26. N or P-Channel Switching Test Circuit
.
Figure 27. N or P-Channel Switching Waveforms
.
Figure 25. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note1 .
Transient thermal response will change depending on the circuit board design.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
10%
PULSE WIDTH
相關(guān)PDF資料
PDF描述
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-4.2A, 漏源電壓-20V，導(dǎo)通電阻0.06Ω）)
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流-5.6A, 漏源電壓-20V，導(dǎo)通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
NDH8447 P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH832P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH8447 制造商:Fairchild Semiconductor Corporation 功能描述:
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