參數(shù)資料
型號： NDH8321C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓20V，導通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）)
中文描述： 3800 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SUPERSOT-8
文件頁數(shù)： 2/12頁
文件大?。?/td> 251K
代理商： NDH8321C
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
V
DS
= 16 V, V
GS
= 0 V
N-Ch
20
V
P-Ch
-20
V
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55
o
C
10
μA
V
DS
= -16 V, V
GS
= 0 V
P-Ch
-1
μA
T
J
= 55
o
C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
All
100
nA
Gate - Body Leakage, Reverse
All
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
N-Ch
0.4
0.7
1
V
T
J
= 125
o
C
0.3
0.45
0.8
V
DS
= V
GS
, I
D
= -250 μA
P-Ch
-0.4
-0.7
-1
T
J
= 125
o
C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 4.5 V, I
D
= 3.8 A
N-Ch
0.029
0.035
T
J
= 125
o
C
0.043
0.063
V
GS
= 2.7 V, I
D
= 3.3 A
V
GS
= -4.5 V, I
D
= -2.7 A
0.036
0.045
P-Ch
0.061
0.07
T
J
= 125
o
C
0.087
0.125
V
GS
= -2.7 V, I
D
= -2.3A
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 3.8 A
V
DS
= -5 V, I
D
= -2.7 A
0.082
0.095
I
D(on)
On-State Drain Current
N-Ch
15
A
5
P-Ch
-10
-3
g
FS
Forward Transconductance
N-Ch
15
S
P-Ch
8
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
700
pF
P-Ch
865
C
oss
Output Capacitance
N-Ch
370
pF
P-Ch
N-Ch
415
145
C
rss
Reverse Transfer Capacitance
pF
P-Ch
150
NDH8321C Rev.C1
相關(guān)PDF資料
PDF描述
NDH832P P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應管（漏電流-4.2A, 漏源電壓-20V，導通電阻0.06Ω）)
NDH833N N-Channel Enhancement Mode Field Effect Transistor
NDH834P P-Channel Enhancement Mode Field Effect Transistor（-5.6A，-20V，0.035Ω）(P溝道增強型MOS場效應管（漏電流-5.6A, 漏源電壓-20V，導通電阻0.035Ω）)
NDH8436 N-Channel Enhancement Mode Field Effect Transistor
NDH8447 P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDH832P 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH833N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH834P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDH8436 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDH8447 制造商:Fairchild Semiconductor Corporation 功能描述:
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