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參數(shù)資料
| 型號(hào)： | NDH8447 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 4400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 94K |
| 代理商： | NDH8447 |
May 1996
NDH8447
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol
Parameter
NDH8447
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
-20
V
I
D
Drain Current - Continuous
(Note 1a)
-4.4
A
- Pulsed
-20
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
NDH8447 Rev. C1
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
-4.4A, -30V. R
DS(ON)
= 0.053
@ V
GS
= -10V
R
DS(ON)
= 0.095
@ V
GS
= -4.5V
High density cell design for extremely low R
DS(ON).
Enhanced SuperSOT
TM
-8 small outline surface mount
package with high power and current handling capability.
1
5
6
7
8
4
3
2
SuperSOT
TM
-8
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDH8502P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.2A，-30V，0.11Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）) |
| NDH8503N | Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω）) |
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流2.8A, 漏源電壓30V，導(dǎo)通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導(dǎo)通電阻0.11Ω）) |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強(qiáng)型場(chǎng)效應(yīng)管(N溝道：漏電流3.8A, 漏源電壓30V，導(dǎo)通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導(dǎo)通電阻0.07Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8502P | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8503N | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDH8504P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8505N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO |
| NDH8507N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO |
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