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參數(shù)資料
| 型號： | NDH8503N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor（3.8A，30V，0.0033Ω）(雙N溝道增強型場效應管（漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω）) |
| 中文描述： | 3800 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NDH8503N |
May 1997
NDH8503N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SuperSOT
TM
-8 N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage
applications such as notebook computer power management,
and other battery powered circuits where fast switching, and
low in-line power loss are needed in a very small outline surface
mount package.
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise note
Symbol
Parameter
NDH8503N
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1)
3.8
A
- Pulsed
10.5
P
D
Maximum Power Dissipation
(Note 1 )
0.8
W
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
J A
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1)
156
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
40
°C/W
NDH8503N Rev.C
3.8 A, 30 V. R
DS(ON)
= 0.033
@ V
GS
= 10 V
R
DS(ON)
= 0.05
@ V
GS
= 4.5 V.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
7
8
6
4
3
2
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDH8504P | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-30V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| NDH8520C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流2.8A, 漏源電壓30V，導通電阻0.07Ω；P溝道：漏電流-2.2A, 漏源電壓-30V，導通電阻0.11Ω）) |
| NDH8521C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓30V，導通電阻0.033Ω；P溝道：漏電流-2.7A, 漏源電壓-30V，導通電阻0.07Ω）) |
| NDH853N | N-Channel Enhancement Mode Field Effect Transistor |
| NDH854P | P-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8504P | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDH8505N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 1.6A I(D) | SO |
| NDH8507N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 2A I(D) | SO |
| NDH8508P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 1.4A I(D) | SO |
| NDH8520C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor |
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