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參數(shù)資料
| 型號： | NDH854P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | NDH854P |
May 1997
NDH854P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDH854P
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current - Continuous
(Note 1a)
-5.1
A
- Pulsed
-15
P
D
Maximum Power Dissipation
(Note 1a)
1.8
W
(Note 1b)
1
(Note 1c)
0.9
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
J C
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
20
°C/W
NDH854P Rev.D
SuperSOT
TM
-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
-5.1 A, -30 V. R
DS(ON)
= 0.032
@ V
GS
= -10 V
R
DS(ON)
= 0.052
@ V
GS
= -4.5V
.
Proprietary SuperSOT
TM
-8 package design using copper
lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
1
5
6
7
8
4
3
2
1997 Fairchild Semiconductor Corporation
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