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參數(shù)資料
| 型號： | NDH854P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | NDH854P |
NDH854P Rev.D
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
0.5
1
1.5
2
2.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 14. SuperSOT
TM
-8 Maximum Steady-State
Power Dissipation versus Copper Mounting
Pad Area.
Typical Thermal Characteristics
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
r
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
Figure 16. Maximum Safe Operating Area.
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
20
30
50
0.01
0.05
0.1
0.5
1
2
5
10
30
-
RDS(ON) LIMIT
D
DC
1s
10s
100ms
10ms
1ms
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
JA
100us
-20
-16
-12
-8
-4
0
0
6
12
18
24
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = - 5V
DS
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
2oz COPPER MOUNTING PAD AREA (in )
-
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
o
D
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