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參數(shù)資料
| 型號(hào)： | NDH854P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | NDH854P |
NDH854P Rev.D
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.94
0.96
0.98
1
1.02
1.04
1.06
1.08
D
I = -250μA
B
D
0
0.2
-V , BODY DIODE FORWARD VOLTAGE (V)
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
1
10
20
-
25°C
-55°C
V = 0V
S
TJ
0
10
20
30
40
0
2
4
6
8
10
Q , GATE CHARGE (nC)
-
G
V = -5V
-15V
I = -5.1A
-10V
0.1
0.2
0.5
1
2
5
10
20
30
200
300
500
1000
2000
3000
4000
-VDS
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
D
S
-V
DD
R
L
V
OUT
V
GS
DUT
V
IN
R
GEN
G
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
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