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參數(shù)資料
| 型號(hào)： | NDH854P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | NDH854P |
NDH854P Rev.D
-3
-2
-1
0
-20
-15
-10
-5
0
V , DRAIN-SOURCE VOLTAGE (V)
I
D
-4.5
-2.5
-4.0
-5.0
-3.5
-3.0
V = -10V
-6.0
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -10V
I = -5.1A
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
V
G
I = -250μA
V = V
GS
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = -3.5 V
R
D
-10
-4.5
-4.0
-7.0
-6.0
-5.0
-5.5
-20
-15
-10
-5
0
0
0.5
1
1.5
2
I , DRAIN CURRENT (A)
D
R
D
V = -10V
GS
J
25°C
-55°C
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
-5
-4.5
-4
-3.5
-3
-2.5
-2
-1.5
-1
-25
-20
-15
-10
-5
0
V , GATE TO SOURCE VOLTAGE (V)
I
D
V = -5V
J
125°C
25°C
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